US 12,134,819 B2
Cesium tungsten oxide film and method for manufacturing same
Keiichi Sato, Tokyo (JP); and Isao Ando, Tokyo (JP)
Assigned to SUMITOMO METAL MINING CO., LTD., Tokyo (JP)
Appl. No. 16/649,213
Filed by SUMITOMO METAL MINING CO., LTD., Tokyo (JP)
PCT Filed Jul. 20, 2018, PCT No. PCT/JP2018/027262
§ 371(c)(1), (2) Date Mar. 20, 2020,
PCT Pub. No. WO2019/058737, PCT Pub. Date Mar. 28, 2019.
Claims priority of application No. 2017-182575 (JP), filed on Sep. 22, 2017; and application No. 2018-017381 (JP), filed on Feb. 2, 2018.
Prior Publication US 2020/0299825 A1, Sep. 24, 2020
Int. Cl. C30B 29/32 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01); C30B 29/22 (2006.01); C03C 17/245 (2006.01)
CPC C23C 14/34 (2013.01) [C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/5806 (2013.01); C30B 29/22 (2013.01); C30B 29/32 (2013.01); C03C 17/245 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A cesium tungsten oxide film comprising cesium, tungsten and oxygen as main components,
wherein an atomic ratio of the cesium and the tungsten is Cs/W, the Cs/W is 0.33 or more and 0.5 or less, the cesium tungsten oxide film has a hexagonal crystal structure and a sheet resistance of over 1.0*1010 ohm per square, and the cesium tungsten oxide film does not contain a particle dispersion, and
an intensity ratio of a diffraction intensity I (200) of hexagonal (200) face and a diffraction intensity I (002) of hexagonal (002) face by X-ray diffraction using CuKα ray is I (002)/I (200), and the I (002)/I (200) is 0.3 or more.