US 12,134,723 B2
Etching composition
Tae Ho Kim, Gyeonggi-do (KR); Jeong Sik Oh, Gyeonggi-do (KR); Gi Young Kim, Gyeonggi-do (KR); Myung Ho Lee, Gyeonggi-do (KR); and Myung Geun Song, Gyeonggi-do (KR)
Assigned to ENF TECHNOLOGY CO., LTD., Gyeonggi-do (KR)
Filed by ENF TECHNOLOGY CO., LTD., Gyeonggi-do (KR)
Filed on May 5, 2022, as Appl. No. 17/737,636.
Claims priority of application No. 10-2021-0066895 (KR), filed on May 25, 2021.
Prior Publication US 2022/0380670 A1, Dec. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 13/08 (2006.01); C01B 33/20 (2006.01); C07F 7/08 (2006.01); H01L 21/4757 (2006.01)
CPC C09K 13/08 (2013.01) [C01B 33/20 (2013.01); C07F 7/0805 (2013.01); H01L 21/47573 (2013.01)] 16 Claims
 
1. An etching composition comprising:
a fluorine compound;
sulfuric acid;
nitrosylsulfuric acid; and
a silicon compound,
wherein the silicon compound comprises a compound represented by formula 1, formula 2, or formula 3, or a combination thereof:

OG Complex Work Unit Chemistry
wherein, in the formula 1 and formula 2,
R1 to R3 are each independently hydrogen, a hydroxyl group, a cyano group, a substituted or unsubstituted C1-10 alkyl group, a C2-10 alkenyl group, a C1-10 aminoalkyl group, a C1-10 alkoxy group, or a halogen element, wherein the alkyl group is linear, branched or cyclic, with or without a halogen element or a substituent of CH3;
R4 is a single bond, a substituted or unsubstituted C1-10 alkyl group, a C2-10 alkenyl group, a C1-10 aminoalkyl group, or a C1-10 alkoxy group, wherein the alkyl group is linear, branched or cyclic, with or without a halogen element or a substituent of CH3; and
L is 1 or 2,
[Formula 3]

OG Complex Work Unit Chemistry
wherein in the formula 3,
R5 is ammonium;
R6 is a halogen element;
a is 2; and
b is 6, and
wherein the composition comprises at least 85% by weight of a combination of sulfuric acid and nitrosylsulfuric acid.
 
15. A method for preparing an etching composition, comprising mixing:
0.3 to 30% by weight of a fluorine compound,
50 to 95% by weight of sulfuric acid,
1 to 30% by weight of nitrosylsulfuric acid,
0.01 to 5% by weight of a silicon compound, and
the balance of water to make 100% by weight of the total weight of the etching composition,
wherein the silicon compound comprises a compound represented by formula 1, formula 2, or formula 3, or a combination thereof:

OG Complex Work Unit Chemistry
wherein, in the formula 1 and formula 2,
R1 to R3 are each independently hydrogen, a hydroxyl group, a cyano group, a substituted or unsubstituted C1-10 alkyl group, a C2-10 alkenyl group, a C1-10 aminoalkyl group, a C1-10 alkoxy group, or a halogen element, wherein the alkyl group is linear, branched or cyclic, with or without a halogen element or a substituent of CH3;
R4 is a single bond, a substituted or unsubstituted C1-10 alkyl group, a C2-10 alkenyl group, a C1-10 aminoalkyl group, or a C1-10 alkoxy group, wherein the alkyl group is linear, branched or cyclic, with or without a halogen element or a substituent of CH3; and
L is 1 or 2,
[Formula 3]

OG Complex Work Unit Chemistry
wherein in the formula 3,
R5 is ammonium;
R6 is a halogen element;
a is 2; and
b is 6, and
wherein the composition comprises at least 85% by weight of a combination of sulfuric acid and nitrosylsulfuric acid.