US 12,134,722 B2
Plasma etching method
Chang-Koo Kim, Seoul (KR); Jun-Hyun Kim, Seongnam-si (KR); and Jin-Su Park, Suwon-si (KR)
Assigned to AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
Appl. No. 17/760,519
Filed by AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION, Suwon-si (KR)
PCT Filed Jun. 1, 2020, PCT No. PCT/KR2020/007073
§ 371(c)(1), (2) Date Mar. 15, 2022,
PCT Pub. No. WO2021/054567, PCT Pub. Date Mar. 25, 2021.
Claims priority of application No. 10-2019-0113777 (KR), filed on Sep. 16, 2019.
Prior Publication US 2022/0363989 A1, Nov. 17, 2022
Int. Cl. C09K 13/00 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC C09K 13/00 (2013.01) [H01J 37/32449 (2013.01); H01L 21/31116 (2013.01); H01J 2237/334 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A plasma etching method comprising:
a first step of providing a mixed gas containing argon gas and vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether having a molecular structure of a following Chemical Formula 1 to a plasma chamber in which an etching target is disposed, wherein the vaporized 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether exists in a liquid state at room temperature; and
a second step of etching the etching target using plasma generated from the mixed gas:

OG Complex Work Unit Chemistry