| CPC C08L 25/14 (2013.01) [C08L 33/08 (2013.01); C08L 33/14 (2013.01); G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/2004 (2013.01); G03F 7/40 (2013.01)] | 20 Claims |

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1. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer comprising a photoresist composition over a substrate;
selectively exposing the photoresist layer to actinic radiation; and
developing the selectively exposed photoresist layer to remove regions of the photoresist layer not exposed to the actinic radiation,
wherein the photoresist composition comprises:
a photoactive compound;
a crosslinker; and
a copolymer,
wherein the copolymer is made up of 95% or greater of repeating units a′ and b′
![]() wherein A1 is a direct link, a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C1-C15 carboxyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
A2 is a C6-C15 phenyl group, a C7-C15 benzyl group, a C1-C15 alkyl group, a C3-C15 cycloalkyl group, a C1-C15 hydroxyalkyl group, a C2-C15 alkoxy group, a C3-C15 alkoxy alkyl group, a C2-C15 acetyl group, a C3-C15 acetyl alkyl group, a C2-C15 alkyl carboxyl group, a C4-C15 cycloalkyl carboxyl group, a C3-C15 saturated or unsaturated hydrocarbon ring, a C2-C15 hetero chain, a C3-C15 heterocyclic ring, or a substituted or unsubstituted three dimensional ring structure;
R2 is a C4-C10 lactone group substituted with a C1-C4 alcohol group;
Ra and Rb are independently H or CH3; and
0<x/(x+y)<1 and 0<y/(x+y)<1.
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