US 12,134,556 B2
Semiconductor device and method for manufacturing a semiconductor device
Enri Duqi, Milan (IT); Lorenzo Baldo, Bareggio (IT); Paolo Ferrari, Gallarate (IT); Benedetto Vigna, Geneva (CH); Flavio Francesco Villa, Milan (IT); Laura Maria Castoldi, Abbiategrasso (IT); and Ilaria Gelmi, Verano Brianza (IT)
Assigned to STMICROELECTRONICS S.R.L., Agrate Brianza (IT); and STMicroelectronics International N.V., Geneva (CH)
Filed by STMICROELECTRONICS S.R.L., Agrate Brianza (IT); and STMicroelectronics International N.V., Geneva (CH)
Filed on Nov. 23, 2021, as Appl. No. 17/534,286.
Claims priority of application No. 102020000029078 (IT), filed on Nov. 30, 2020.
Prior Publication US 2022/0169498 A1, Jun. 2, 2022
Int. Cl. B81B 7/00 (2006.01)
CPC B81B 7/0035 (2013.01) 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a transduction microstructure in the substrate;
a cap coupled to the substrate and having a first face facing the substrate and an outer second face;
a channel extending through the cap from the second face to the first face and in fluid communication with the transduction microstructure, the channel including an internal sidewall;
a protective membrane of porous polycrystalline silicon, the protective membrane having pores with an equivalent diameter comprised between 5 nm and 50 nm and being across the channel and on the internal sidewall of the channel.