US 12,134,138 B2
Wafer manufacturing method
Kazuma Sekiya, Tokyo (JP)
Assigned to DISCO CORPORATION, Tokyo (JP)
Filed by DISCO CORPORATION, Tokyo (JP)
Filed on Jan. 19, 2023, as Appl. No. 18/156,581.
Claims priority of application No. 2022-018893 (JP), filed on Feb. 9, 2022.
Prior Publication US 2023/0249282 A1, Aug. 10, 2023
Int. Cl. B23K 26/062 (2014.01); B23K 26/00 (2014.01); B26D 3/28 (2006.01); B26D 7/08 (2006.01); B23K 103/00 (2006.01)
CPC B23K 26/0093 (2013.01) [B23K 26/062 (2015.10); B26D 3/282 (2013.01); B26D 7/086 (2013.01); B23K 2103/56 (2018.08)] 4 Claims
OG exemplary drawing
 
1. A wafer manufacturing method for manufacturing a wafer from an ingot, comprising:
a crack layer forming step of applying a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned in a region spaced from an end face of the ingot by a distance corresponding to a thickness of the wafer to be manufactured, to form a crack layer;
a cut groove forming step of positioning a cutting blade on an extension line of the crack layer and forming, in a periphery of the ingot, a cut groove continuous with the crack layer; and
a peeling step of applying an ultrasonic wave to the end face of the ingot to peel off the wafer to be manufactured, along the crack layer, after the cut groove forming step.