| CPC H10B 43/30 (2023.02) [H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02); H10D 30/69 (2025.01); H10B 43/50 (2023.02)] | 25 Claims |

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1. A semiconductor device comprising:
a stacked body including a first electrode layer and a second electrode layer provided to be electrically insulated from the first electrode layer in a stacking direction [ , the stacked body including a first staircase portion provided in a first end region in a first direction intersecting the stacking direction, and a second staircase portion provided in a second end region located on a side opposite to the first end region in the first region] ;
at least two first insulating layers provided in the stacked body to range from an upper end of the stacked body to a lower end of the stacked body, and extending in
a first staircase portion provided in a first end region of the stacked body between the at least two first insulating layers;
a second staircase portion provided in a second end region of the stacked body located on a side opposite to the first end region between the at least two first insulating layers; and [ ;
at least two second insulating layers provided in the stacked body to range from the upper end of the stacked body to the lower end of the stacked body, and extending in the first direction; ]
a
a plurality of first column-shaped portions extending in the stacking direction through the stacked body and arranged in at least four rows each extending in the first direction between the one of the at least two first insulating layers and the third insulating layer; and
a plurality of second column-shaped portions extending in the stacking direction through the stacked body and arranged in at least four rows each extending in the first direction between the one of the at least two second insulating layers and the third insulating layer,
wherein ] a length in the first direction of the
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