US 12,464,961 B2
Semiconductor device and method for fabricating the same
Gwang Hyuk Shin, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Sep. 6, 2022, as Appl. No. 17/903,857.
Claims priority of application No. 10-2021-0164100 (KR), filed on Nov. 25, 2021.
Prior Publication US 2023/0165173 A1, May 25, 2023
Int. Cl. H10N 70/00 (2023.01); G11C 11/16 (2006.01); H10B 63/00 (2023.01); H10N 50/10 (2023.01)
CPC H10N 70/841 (2023.02) [H10B 63/84 (2023.02); H10N 70/882 (2023.02); H10N 70/883 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first conductive line including an opening passing through the first conductive line;
a second conductive line disposed over the first conductive line to be spaced apart from the first conductive line;
a first electrode layer buried in the opening;
a selector layer disposed in the opening and surrounding side surfaces of the first electrode layer;
a variable resistance layer disposed over the selector layer and the first electrode layer; and
a first dielectric layer and a second dielectric layer that are disposed between the first conductive line and the second conductive line,
wherein the first dielectric layer is disposed between the first conductive line and the second dielectric layer,
wherein the second dielectric layer is disposed on the first dielectric layer and surrounding side surfaces of the variable resistance layer, and
wherein the opening is disposed to pass through the first conductive line and the first dielectric layer.