US 12,464,960 B2
Metal hard mask integration for active device structures
Michael Rizzolo, Delmar, NY (US); Takashi Ando, Eastchester, NY (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); and Kevin W. Brew, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 30, 2021, as Appl. No. 17/537,667.
Prior Publication US 2023/0172081 A1, Jun. 1, 2023
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/841 (2023.02) [H10N 70/063 (2023.02); H10B 63/80 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
an active device stack comprising one or more layers, the one or more layers comprising a top electrode;
an additional layer disposed over the active device stack;
an encapsulation layer surrounding the active device stack and the additional layer; and
a contact to the top electrode coupled to the additional layer;
wherein the additional layer and the contact comprise a first material; and
wherein the top electrode comprises a second material different than the first material.