US 12,464,959 B2
Magnetization rotational element, magnetoresistive effect element, and magnetic memory
Kosuke Hamanaka, Tokyo (JP); Yohei Shiokawa, Tokyo (JP); and Minoru Sanuki, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/927,469
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed Nov. 15, 2021, PCT No. PCT/JP2021/041886
§ 371(c)(1), (2) Date Nov. 23, 2022,
PCT Pub. No. WO2022/102770, PCT Pub. Date May 19, 2022.
Claims priority of application No. PCT/JP2020/042602 (WO), filed on Nov. 16, 2020.
Prior Publication US 2023/0180629 A1, Jun. 8, 2023
Int. Cl. H10N 52/85 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01)
CPC H10N 52/85 (2023.02) [H10B 61/22 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetization rotational element comprising:
a spin-orbit torque wiring; and
a first ferromagnetic layer in contact with the spin-orbit torque wiring, wherein
the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and
a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.