US 12,464,955 B2
Magnetic tunnel junction device and method of forming the same
Harry-HakLay Chuang, Zhubei (TW); Hung Cho Wang, Taipei (TW); Sheng-Huang Huang, Hsinchu (TW); Hung-Yu Chang, Taoyuan (TW); and Keng-Ming Kuo, Yunlin County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 20, 2022, as Appl. No. 17/725,146.
Claims priority of provisional application 63/287,734, filed on Dec. 9, 2021.
Prior Publication US 2023/0189657 A1, Jun. 15, 2023
Int. Cl. H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first conductive feature on a semiconductor substrate;
a bottom electrode on the first conductive feature;
a magnetic tunnel junction (MTJ) stack on the bottom electrode, the MTJ stack comprising:
a reference layer on the bottom electrode;
a tunnel barrier layer on the reference layer; and
a free layer on the reference layer;
a first spacer in contact with a side surface of the free layer and a side surface of the tunnel barrier layer, wherein a bottom surface of the first spacer is level with a bottom surface of the tunnel barrier layer;
a second spacer adjacent the first spacer and has a bottom surface nearer the semiconductor substrate than a bottom surface of the first spacer; and
a top electrode on the MTJ stack.