| CPC H10N 30/074 (2023.02) [B82Y 40/00 (2013.01); G01L 1/16 (2013.01); H10D 30/67 (2025.01); H10N 30/067 (2023.02); H10N 39/00 (2023.02)] | 13 Claims |

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1. A method of manufacturing a pressure sensor, comprising:
manufacturing a bottom electrode on a substrate;
manufacturing a seed layer on the bottom electrode;
manufacturing a zinc oxide nanowire layer on the seed layer, wherein the zinc oxide nanowire layer is manufactured by: placing a sample of a ZnO film grown on the bottom electrode in a growth solution of ZnO nanowires to grow the ZnO nanowires at a temperature of 70° C. to 100° C., so as to synthesize the zinc oxide nanowire layer; wherein the zinc oxide nanowire layer has a thickness of 100 nm to 200 nm, the zinc oxide nanowire layer is a regular hexagon with a cross-section diameter of 150 nm, and the zinc oxide nanowire layer has a dense stacked structure; and wherein when the bottom electrode is in contact with the zinc oxide nanowire layer, a potential barrier of 0.65 eV is formed, so as to implement a characteristic of a pressure sensing of the pressure sensor under a voltage of 3 V to 5 V;
manufacturing a support layer on the zinc oxide nanowire layer; and
manufacturing a top electrode on the support layer.
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