US 12,464,907 B2
Display apparatus
Seongmin Wang, Yongin-si (KR); Youngin Hwang, Yongin-si (KR); and Yongho Yang, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on Jun. 18, 2024, as Appl. No. 18/746,913.
Application 18/746,913 is a continuation of application No. 18/138,870, filed on Apr. 25, 2023, granted, now 12,048,208.
Application 18/138,870 is a continuation of application No. 17/199,890, filed on Mar. 12, 2021, granted, now 11,659,738, issued on May 23, 2023.
Application 17/199,890 is a continuation of application No. 16/365,757, filed on Mar. 27, 2019, granted, now 10,978,538, issued on Apr. 13, 2021.
Claims priority of application No. 10-2018-0107379 (KR), filed on Sep. 7, 2018.
Prior Publication US 2024/0341133 A1, Oct. 10, 2024
Int. Cl. H10K 59/126 (2023.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01)
CPC H10K 59/126 (2023.02) [H10K 59/1216 (2023.02); H10K 59/131 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display apparatus comprising a first pixel and a second pixel in display area, each of the first pixel and the second pixel comprising:
a driving transistor comprising a first semiconductor layer comprising a silicon and a first gate electrode;
a first switching transistor comprising a second semiconductor layer comprising a silicon and a second gate electrode;
a second switching transistor comprising a third semiconductor layer comprising an oxide and a third gate electrode;
a first capacitor comprising a first electrode and a second electrode;
a first shielding layer overlapping the driving transistor, the first shielding layer interposed between a substrate and the first semiconductor layer; and
a second shielding layer overlapping the second switching transistor, the second shielding layer interposed between the substrate and the third semiconductor layer,
wherein the first electrode of the first capacitor is a part of a scan line connected to the second gate electrode, and the second electrode of the first capacitor is a part of the second semiconductor layer.