US 12,464,869 B2
Light-emitting element with a cushion part
Chao-Hsing Chen, Hsinchu (TW); Tsung-Hsun Chiang, Hsinchu (TW); Chien-Chih Liao, Hsinchu (TW); Wen-Hung Chuang, Hsinchu (TW); Min-Yen Tsai, Hsinchu (TW); and Bo-Jiun Hu, Hsinchu (TW)
Assigned to EPISTAR CORPORATION, Hsinchu (TW)
Filed by EPISTAR CORPORATION, Hsinchu (TW)
Filed on Apr. 17, 2024, as Appl. No. 18/638,220.
Application 18/638,220 is a continuation of application No. 17/241,958, filed on Apr. 27, 2021, granted, now 12,002,904.
Application 17/241,958 is a continuation of application No. 16/182,241, filed on Nov. 6, 2018, granted, now 10,991,854, issued on Apr. 27, 2021.
Application 16/182,241 is a continuation of application No. 15/669,613, filed on Aug. 4, 2017, granted, now 10,153,402, issued on Dec. 11, 2018.
Application 15/669,613 is a continuation of application No. 14/948,733, filed on Nov. 23, 2015, granted, now 9,761,774, issued on Sep. 12, 2017.
Claims priority of provisional application 62/092,422, filed on Dec. 16, 2014.
Prior Publication US 2024/0266476 A1, Aug. 8, 2024
Int. Cl. H01L 23/00 (2006.01); H10H 20/81 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/84 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/84 (2025.01) [H01L 23/562 (2013.01); H10H 20/81 (2025.01); H10H 20/831 (2025.01); H10H 20/832 (2025.01); H10H 20/857 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light-emitting element comprises:
a semiconductor light-emitting stack comprising a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween;
a first depression penetrating the second semiconductor layer, the active layer, and the first semiconductor layer;
a first conductive layer formed on the second semiconductor layer;
a first insulating layer comprising a second depression disposed on the second semiconductor layer;
a second conductive layer formed on the second semiconductor layer and being devoid of directly contacting the first conductive layer, wherein the second conductive layer comprises a third depression at a center region of the light-emitting element;
a first pad disposed on the first insulating layer and electrically connecting to the first semiconductor layer;
a second pad disposed on the first insulating layer and electrically connecting to the second semiconductor; and
a cushion part disposed between the first pad and the second pad, wherein in a top view, the cushion part is disposed corresponding to the third depression.