US 12,464,866 B2
Display device using semiconductor light emitting elements, and method for manufacturing same
Byungjun Kang, Seoul (KR); and Junghoon Kim, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/780,779
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Feb. 11, 2020, PCT No. PCT/KR2020/001889
§ 371(c)(1), (2) Date May 27, 2022,
PCT Pub. No. WO2021/107273, PCT Pub. Date Jun. 3, 2021.
Claims priority of application No. 10-2019-0157439 (KR), filed on Nov. 29, 2019.
Prior Publication US 2022/0416128 A1, Dec. 29, 2022
Int. Cl. H01L 25/075 (2006.01); H10H 20/01 (2025.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/8312 (2025.01) [H01L 25/0753 (2013.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate including a plurality of wiring electrodes;
a semiconductor light emitting device electrically connected to the plurality of wiring electrodes; and
a passivation layer disposed to cover the semiconductor light emitting device,
wherein the semiconductor light emitting device comprises:
a first conductivity type semiconductor layer;
an active layer disposed on the first conductivity type semiconductor layer;
a second conductivity type semiconductor layer disposed above the active side;
a first electrode disposed on the first conductivity type semiconductor layer;
a second electrode disposed on the second conductivity type semiconductor layer; and
an etching stop layer disposed below the first conductivity type semiconductor layer, and
wherein the passivation layer exposes a side surface of the etching stop layer, and exposes a part of a side surface of the semiconductor light emitting device.