| CPC H10H 20/8215 (2025.01) [H10H 20/01 (2025.01); H10H 20/8162 (2025.01); H10H 20/84 (2025.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10H 20/034 (2025.01); H10H 20/825 (2025.01)] | 18 Claims |
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1. A semiconductor structure, comprising:
an N-type semiconductor layer, a P-type ion doped layer, and a light emitting layer between the N-type semiconductor layer and the P-type ion doped layer, wherein the P-type ion doped layer comprises an activated region and non-activated regions located on two sides of the activated region, H atoms in the activated region escape to active P-type doping ions in the activated region, and H atoms in the non-activated region do not escape to passivate P-type doping ions in the non-activated regions; and
wherein the semiconductor structure further comprises an electron blocking layer between the light emitting layer and the P-type ion doped layer;
wherein the electron blocking layer comprises a first region and a second region, H atoms in the first region escape to active P-type doping ions in the first region, an orthographic projection of the first region on a plane where the N-type semiconductor layer is located coincides with an orthographic projection of the activated region of the P-type ion doped layer on the plane where the N-type semiconductor layer is located; and H atoms in the second region do not escape to passivate P-type doping ions in the second region, an orthographic projection of the second region on the plane where the N-type semiconductor layer are located coincides with orthographic projection of the non-activated region of the P-type ion doped layer on the plane where the N-type semiconductor layer is located.
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