| CPC H10H 20/8215 (2025.01) [G06N 10/40 (2022.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); H10H 20/812 (2025.01)] | 15 Claims |

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1. A device comprising:
a body of semiconductor material consisting principally of silicon;
one or more luminescence centres disposed in the body of semiconductor material, each of the one or more luminescence centres comprising a defect selected from the group consisting of: T-center, Al1 defect, and Ga1 defect;
one or more optical degrees of freedom associated with the one or more luminescence centres;
one or more local degrees of freedom associated with each of the the one or more luminescence centres; and
one or more optical structures optically coupled to, a respective luminescence center of the one or more luminescence centres, the one or more optical structures comprising an optical resonator supporting one or more photonic modes,
wherein:
a respective local degree of freedom is associated with the respective luminescence centre,
the one or more local degrees of freedom of the respective luminescence centre modify the one or more optical degrees of freedom of the respective luminescence centre, and
the one or more optical structures are operable to receive photons corresponding to the one or more optical degrees of freedom of the respective luminescence centre as modified by the one or more local degrees of freedom of the respective luminescence centre.
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