US 12,464,860 B2
Full-color LED structure, and full-color LED structure unit and method for manufacturing same
Kai Cheng, Jiangsu (CN); and Liyang Zhang, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Appl. No. 18/031,316
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
PCT Filed Nov. 20, 2020, PCT No. PCT/CN2020/130371
§ 371(c)(1), (2) Date Apr. 11, 2023,
PCT Pub. No. WO2022/104680, PCT Pub. Date May 27, 2022.
Prior Publication US 2023/0378396 A1, Nov. 23, 2023
Int. Cl. H10H 20/821 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/821 (2025.01) [H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A full-color LED structure unit, comprising:
a first semiconductor layer, in which a first trench is provided;
a light-emitting layer comprising a first sub-region, a second sub-region and a third sub-region, wherein the first sub-region covers a bottom wall of the first trench, the second sub-region covers side walls of the first trench, and the third sub-region covers a top wall of the first semiconductor layer; and
a second semiconductor layer covering the light-emitting layer, wherein the second semiconductor layer has an opposite conductive type to the first semiconductor layer, and materials of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are a group III-V compound;
wherein different wavelengths of light emitted from the first sub-region, the second sub-region and the third sub-region are achieved by controlling different surface dimensions of the bottom wall and the side wall of the first trench or the top wall of the first semiconductor layer.