| CPC H10F 77/311 (2025.01) [H10F 10/146 (2025.01); H10F 71/103 (2025.01); H10F 71/1221 (2025.01); H10F 71/129 (2025.01); H10F 77/122 (2025.01); H10F 77/1223 (2025.01); H10F 77/1642 (2025.01); H10F 77/1662 (2025.01); H10F 77/219 (2025.01); H10F 77/315 (2025.01); H10F 77/703 (2025.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02E 10/548 (2013.01); Y02P 70/50 (2015.11)] | 15 Claims |
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1. A method of fabricating alternating N-type and P-type emitter regions of a solar cell, the method comprising:
forming an N-type silicon layer on a first thin dielectric layer formed on a back surface of a substrate;
forming an insulating layer on the N-type silicon layer;
patterning the insulating layer and the N-type silicon layer to form N-type silicon regions having an insulating cap thereon;
forming a second thin dielectric layer on exposed sides of the N-type silicon regions;
forming a P-type silicon layer on a third thin dielectric layer formed on the back surface of the substrate, and on the second thin dielectric layer and the insulating cap of the N-type silicon regions;
forming a P-type amorphous silicon layer on the P-type silicon layer;
patterning the P-type amorphous silicon layer and the P-type silicon layer to form isolated P-type emitter regions and to form contact openings in regions of the P-type amorphous silicon layer and the P-type silicon layer above the insulating cap of the N-type silicon regions;
patterning the insulating cap through the contact openings to expose portions of the N-type silicon regions; and
forming conductive contacts to the N-type silicon regions and to the P-type emitter regions, the conductive contacts to the N-type silicon regions formed in the contact openings, and the conductive contacts to the P-type emitter regions formed in direct contact with the P-type amorphous silicon layer of the P-type emitter regions.
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