US 12,464,845 B2
Solid-state imaging element and electronic apparatus
Atsushi Masagaki, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Feb. 7, 2024, as Appl. No. 18/435,461.
Application 18/435,461 is a continuation of application No. 17/258,213, granted, now 11,961,862, previously published as PCT/JP2019/021956, filed on Jun. 3, 2019.
Claims priority of application No. 2018-133271 (JP), filed on Jul. 13, 2018.
Prior Publication US 2024/0186354 A1, Jun. 6, 2024
Int. Cl. H01L 27/146 (2006.01); H10F 39/00 (2025.01)
CPC H10F 39/807 (2025.01) [H10F 39/80373 (2025.01); H10F 39/80377 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a semiconductor substrate including:
a first pixel;
a second pixel,
wherein the first pixel is adjacent to the second pixel;
a trench disposed through the semiconductor substrate; and
at least one transistor including a gate,
wherein the gate of the at least one transistor is disposed above one surface of the semiconductor substrate,
wherein the gate of the at least one transistor is shared by the first pixel and the second pixel,
wherein the gate of the at least one transistor is disposed directly above and covers a top portion of the trench in a cross-sectional view,
wherein the at least one transistor comprises a reset transistor, an amplification transistor, and a selection transistor, and
wherein at least one of the reset transistor, the amplification transistor, or the selection transistor is arranged in parallel with another of the reset transistor, the amplification transistor or the selection transistor provided between the first pixel and the second pixel.