US 12,464,844 B2
Image sensing device
Soon Yeol Park, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 26, 2021, as Appl. No. 17/331,200.
Claims priority of application No. 10-2021-0018444 (KR), filed on Feb. 9, 2021.
Prior Publication US 2022/0254818 A1, Aug. 11, 2022
Int. Cl. H01L 27/146 (2006.01); G01S 7/481 (2006.01); G01S 17/894 (2020.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); H10F 30/225 (2025.01)
CPC H10F 39/807 (2025.01) [G01S 7/4816 (2013.01); G01S 17/894 (2020.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/8063 (2025.01); H10F 30/225 (2025.01)] 16 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a substrate having an upper surface and a lower surface;
a photoelectric conversion device formed in the substrate and structured to convert incident light into an electrical signal carrying information associated with the incident light; and
an isolation structure formed in the substrate along at least a side surface and a bottom surface of the photoelectric conversion device,
wherein the isolation structure comprises:
a first isolation region which extends from the upper surface of the substrate to a first depth in the substrate to surround the side surface of the photoelectric conversion device; and
a second isolation region which is formed in the substrate below the bottom surface of the photoelectric conversion device, the second isolation region electrically connected with the first isolation region,
wherein the first isolation region and the second isolation region are configured to receive an isolation voltage that has an absolute value higher than a ground voltage and lower than an absolute value of a breakdown voltage of the photoelectric conversion device.