US 12,464,838 B2
Solid-state imaging device and electronic apparatus
Kazuya Sasaki, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/626,236
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 10, 2020, PCT No. PCT/JP2020/027048
§ 371(c)(1), (2) Date Jan. 11, 2022,
PCT Pub. No. WO2021/015009, PCT Pub. Date Jan. 28, 2021.
Claims priority of application No. 2019-135930 (JP), filed on Jul. 24, 2019.
Prior Publication US 2022/0254819 A1, Aug. 11, 2022
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/802 (2025.01) [H10F 39/18 (2025.01); H10F 39/8037 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a semiconductor substrate;
a photoelectric conversion element in the semiconductor substrate;
a transfer transistor, wherein the transfer transistor includes a transfer gate; and
a charge accumulator in the semiconductor substrate,
wherein the transfer gate includes a vertical electrode that extends in a depth direction from a first surface of the semiconductor substrate,
wherein the vertical electrode includes a first electrode section embedded in the semiconductor substrate,
wherein the transfer gate includes a second electrode section embedded in the semiconductor substrate,
wherein a distal end of the first electrode section extends to a first distance from a first surface of the semiconductor substrate,
wherein a distal end of the second electrode section extends to a second distance from the first surface of the semiconductor substrate,
wherein the first distance is greater than the second distance,
wherein in a horizonal view, the vertical electrode has a circular shape, and
wherein the distal end of the first electrode section and the distal end of the second electrode section form a slant with respect to the first surface of the semiconductor substrate.