| CPC H10F 30/2255 (2025.01) [H10F 71/121 (2025.01); H10F 77/122 (2025.01); H10F 77/206 (2025.01)] | 20 Claims |
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1. A structure for an avalanche photodetector, the structure comprising:
a substrate having a first conductivity type;
a first semiconductor layer that defines an absorption region of the avalanche photodetector;
a first contact connected to the substrate;
a second contact connected to a side edge portion of the first semiconductor layer;
a dielectric layer between the first semiconductor layer and the substrate;
a charge control region comprising a semiconductor material having a second conductivity type opposite to the first conductivity type and a different bandgap from the first semiconductor layer; and
a second semiconductor layer that extends through the dielectric layer from the charge control region to the substrate,
wherein the second semiconductor layer defines a multiplication region.
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