| CPC H10F 19/50 (2025.01) [H10F 39/1825 (2025.01); H10F 39/805 (2025.01); H10K 39/32 (2023.02); H10F 39/8037 (2025.01); H10F 39/812 (2025.01)] | 46 Claims |

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1. An imaging element comprising:
a first electrode and a second electrode that are disposed in parallel;
a third electrode that is disposed to be opposed to the first electrode and the second electrode;
a photoelectric conversion layer that is provided between the first electrode and second electrode and the third electrode; and
a semiconductor layer that is provided between the first electrode and second electrode and the photoelectric conversion layer, the semiconductor layer having a first layer and a second layer stacked therein in order from the photoelectric conversion layer side, the second layer having an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band,
wherein the first layer includes a layer therein, the layer including more carbon than another region in the first layer.
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