| CPC H10D 99/00 (2025.01) [H01L 23/5256 (2013.01); H01L 23/5258 (2013.01); H10D 84/209 (2025.01); H10D 1/47 (2025.01)] | 26 Claims |

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1. A method of forming an integrated circuit, comprising:
forming a plurality of unit resistors in a semiconductor substrate;
connecting a first subset N of the unit resistors in series thereby forming a first composite resistor;
connecting a second subset N of the unit resistors in parallel thereby forming a second composite resistor;
connecting a first terminal of the first composite resistor and a first terminal of the second composite resistor to a first interconnection bus;
connecting a second terminal of the first composite resistor and a second terminal of the second composite resistor to a second interconnection bus; and
connecting a first fusible link between the second interconnection bus and the first composite resistor, and connecting a second fusible link between the second interconnection bus and the second composite resistor.
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