| CPC H10D 84/907 (2025.01) [H10D 89/10 (2025.01); H10D 84/981 (2025.01)] | 10 Claims |
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1. A semiconductor integrated circuit device comprising a plurality of cell rows each including standard cells lining up in a first direction, the cell rows being arranged in a second direction perpendicular to the first direction,
wherein
the plurality of cell rows include
a first standard cell having a logical function placed in a first cell row, the first cell row being a row located second from an end row in the second direction, and
a second standard cell having no logical function placed in a second cell row, the second cell row being the end row in the second direction and adjoining the first cell row, the second standard cell being adjacent to the first standard cell in the second direction,
the first standard cell includes
a first region in which a transistor of a first conductivity type is formed,
a second region in which a transistor of a second conductivity type is formed,
a first transistor of the first conductivity type formed in the first region, a second transistor of the second conductivity type formed in the second region,
a first buried power line supplying a first power supply voltage, formed in a buried interconnect layer, and
a second buried power line supplying a second power supply voltage, formed in the buried interconnect layer,
the second standard cell includes
a third region in which a transistor of the second conductivity type is formed,
a third transistor of the second conductivity type formed in the third region, opposed to the second transistor in the second direction,
a third buried power line supplying the second power supply voltage, formed in the buried interconnect layer and placed on a same side of the third transistor as the second transistor, and
a fourth buried power line supplying the first power supply voltage, formed in the buried interconnect layer and placed on an opposite side of the third transistor from the second transistor, and
the size of the fourth buried power line in the second direction is greater than the size of the third buried power line in the second direction.
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