US 12,464,816 B2
Semiconductor device and method for forming the same
Jhon-Jhy Liaw, Hsinchu County (TW)
Assigned to Parabellum Strategic Opportunities Fund LLC, Austin, TX (US)
Filed by Parabellum Strategic Opportunities Fund LLC, Wilmington, DE (US)
Filed on May 5, 2023, as Appl. No. 18/312,844.
Application 18/312,844 is a division of application No. 17/200,272, filed on Mar. 12, 2021, granted, now 11,682,672.
Application 17/200,272 is a continuation of application No. 15/492,059, filed on Apr. 20, 2017, granted, now 10,950,605, issued on Mar. 16, 2021.
Claims priority of provisional application 62/475,914, filed on Mar. 24, 2017.
Prior Publication US 2023/0275095 A1, Aug. 31, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 84/85 (2025.01); H10D 30/62 (2025.01)
CPC H10D 84/853 (2025.01) [H10D 30/62 (2025.01); H10D 30/6219 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a transistor comprising:
a substrate;
a semiconductor fin extending upwardly from the substrate;
a gate structure of the transistor extending across the semiconductor fin along a direction;
a source structure of the transistor on the semiconductor fin;
a drain structure of the transistor on the semiconductor fin, wherein the source and drain structures are respectively on opposite sides of the gate structure;
a source contact landing on the source structure; and
a drain contact landing on the drain structure, wherein the source contact and the drain contact have different lengths along the direction, and have different profiles in a plan view.
 
10. A semiconductor device, comprising:
a transistor comprising:
a first fin extending in a first direction and having a first epitaxial structure and a second epitaxial structure:
a gate extending in a second direction perpendicular to the first direction, wherein the first and second epitaxial structures are respectively on opposite sides of the gate in a plan view;
a first contact in direct contact with the first epitaxial structure and laterally extending beyond a longitudinal end of the gate when viewed in a first cross-section taken along the second direction; and
a second contact in direct contact with the second epitaxial structure, wherein, in the plan view, the first contact and the second contact have different lengths along the second direction.
 
16. A semiconductor device, comprising:
a transistor comprising:
a first fin extending in a first direction and having a first source and a first drain;
a gate extending in a second direction perpendicular to the first direction, wherein the first source and the first drain are respectively on opposite sides of the gate in a plan view;
a first source contact in direct contact with the first source; and
a first drain contact in direct contact with the first drain and laterally extending beyond a longitudinal end of the gate when viewed in a first cross-section taken along the second direction,
wherein, in the plan view, the first source contact and the first drain contact have different lengths along the second direction.