US 12,464,810 B2
Integrated circuit device having inclined structures
Juhun Park, Seoul (KR); Deokhan Bae, Suwon-si (KR); Myungyoon Um, Seoul (KR); Yuri Lee, Hwaseong-si (KR); Yoonyoung Jung, Suwon-si (KR); and Sooyeon Hong, Yongin-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 6, 2022, as Appl. No. 17/569,795.
Claims priority of application No. 10-2021-0064219 (KR), filed on May 18, 2021.
Prior Publication US 2022/0375934 A1, Nov. 24, 2022
Int. Cl. H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/834 (2025.01) [H10D 30/024 (2025.01); H10D 30/031 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/258 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a first fin-type active region and a second fin-type active region, the first fin-type active region and the second fin-type active region extending on a substrate in a straight line in a first horizontal direction, the first fin-type active region and the second fin-type active region adjacent to each other in the first horizontal direction;
a fin isolation region on the substrate and between the first fin-type active region and the second fin-type active region, the fin isolation region comprising a fin isolation insulation structure extending in a second horizontal direction that is perpendicular to the first horizontal direction;
a plurality of gate lines on the first fin-type active region and extending in the second horizontal direction,
wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined in the first horizontal direction, an inclination from a lowermost surface of the first gate line to an uppermost surface of the first gate line being towards a center of the fin isolation region, and
wherein the fin isolation insulation structure includes:
a fin isolation insulation pattern filling a space between the first fin-type active region and the second fin-type active region;
a fin isolation insulation liner contacting an upper surface of the fin isolation insulation pattern and covering a sidewall of the first gate line, wherein sidewalls of the fin isolation insulation liner are inclined in the first horizontal direction and an inclination from a lower portion of the sidewalls to an upper portion of the sidewalls is towards the center of the fin isolation region; and
a fin isolation gap-fill insulation layer between the first fin-type active region and the second fin-type active region and filling an upper space on the fin isolation insulation liner,
wherein a lowermost surface of the fin isolation insulation liner and a lowermost surface of the fin isolation gap-fill insulation layer are lower than the upper surface of the fin isolation insulation pattern; and
a plurality of insulation capping lines, wherein each insulation capping line of the plurality of insulation capping lines respectively covers upper surfaces of the plurality of gate lines, and a sidewall of the insulation capping line on the upper surface of the first gate line contacts the fin isolation insulation liner.