US 12,464,807 B2
Semiconductor apparatus including capacitor and method of manufacturing the same, and electronic device
Huilong Zhu, Poughkeepsie, NY (US)
Assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Appl. No. 17/908,596
Filed by INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
PCT Filed Feb. 24, 2021, PCT No. PCT/CN2021/077627
§ 371(c)(1), (2) Date Sep. 1, 2022,
PCT Pub. No. WO2021/175136, PCT Pub. Date Sep. 10, 2021.
Claims priority of application No. 202010141125.1 (CN), filed on Mar. 3, 2020.
Prior Publication US 2023/0092643 A1, Mar. 23, 2023
Int. Cl. H10D 84/80 (2025.01); H10D 1/00 (2025.01); H10D 1/66 (2025.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01)
CPC H10D 84/811 (2025.01) [H10D 1/047 (2025.01); H10D 1/66 (2025.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01)] 35 Claims
OG exemplary drawing
 
1. A semiconductor apparatus, comprising:
a vertical semiconductor device comprising an active region extending vertically on a substrate; and
a capacitor comprising a first capacitor electrode, a capacitor dielectric layer, and a second capacitor electrode sequentially stacked,
wherein the first capacitor electrode extends vertically on the substrate and comprises a conductive material, and the conductive material contains at least one semiconductor element contained in the active region of the vertical semiconductor device.