US 12,464,802 B2
Manufacturable gallium and nitrogen containing single frequency laser diode
Philip Chan, Santa Barbara, CA (US); Phillip Skahan, Santa Barbara, CA (US); Nick Pfister, Goleta, CA (US); Christian Zollner, Santa Barbara, CA (US); and James W. Raring, Santa Barbara, CA (US)
Assigned to KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed by KYOCERA SLD Laser, Inc., Goleta, CA (US)
Filed on Jun. 27, 2022, as Appl. No. 17/849,848.
Application 17/849,848 is a continuation in part of application No. 17/078,389, filed on Oct. 23, 2020, granted, now 11,955,521.
Application 17/078,389 is a continuation of application No. 16/835,082, filed on Mar. 30, 2020, granted, now 10,854,778, issued on Dec. 1, 2020.
Application 16/835,082 is a continuation of application No. 16/796,154, filed on Feb. 20, 2020, granted, now 10,854,776, issued on Dec. 1, 2020.
Application 16/796,154 is a continuation of application No. 16/005,255, filed on Jun. 11, 2018, granted, now 10,629,689, issued on Apr. 21, 2020.
Application 16/005,255 is a continuation of application No. 15/480,239, filed on Apr. 5, 2017, granted, now 10,002,928, issued on Jun. 19, 2018.
Application 15/480,239 is a continuation of application No. 15/209,309, filed on Jul. 13, 2016, granted, now 9,653,642, issued on May 16, 2017.
Application 15/209,309 is a continuation in part of application No. 14/580,693, filed on Dec. 23, 2014, granted, now 9,666,677, issued on May 30, 2017.
Prior Publication US 2022/0344476 A1, Oct. 27, 2022
Int. Cl. H10D 84/01 (2025.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01S 5/02 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01); H10D 8/01 (2025.01); H10D 10/01 (2025.01); H10D 30/01 (2025.01); H10D 62/824 (2025.01); H10D 84/00 (2025.01); H10D 84/05 (2025.01); H10D 84/80 (2025.01); H10D 84/83 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10H 20/01 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 29/10 (2025.01); H10D 8/00 (2025.01); H10D 8/60 (2025.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01); H10D 64/60 (2025.01); H10D 84/08 (2025.01); H10D 84/82 (2025.01)
CPC H10D 84/01 (2025.01) [H01L 21/02458 (2013.01); H01L 21/311 (2013.01); H01S 5/0203 (2013.01); H01S 5/0217 (2013.01); H01S 5/227 (2013.01); H01S 5/34333 (2013.01); H10D 8/045 (2025.01); H10D 8/051 (2025.01); H10D 10/021 (2025.01); H10D 30/015 (2025.01); H10D 30/0516 (2025.01); H10D 62/824 (2025.01); H10D 84/05 (2025.01); H10D 84/204 (2025.01); H10D 84/811 (2025.01); H10D 84/83 (2025.01); H10D 86/021 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10H 20/0133 (2025.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10H 20/018 (2025.01); H10H 20/811 (2025.01); H10H 20/812 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 29/10 (2025.01); H01L 2224/95 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H10D 8/422 (2025.01); H10D 8/60 (2025.01); H10D 30/475 (2025.01); H10D 62/343 (2025.01); H10D 62/8503 (2025.01); H10D 64/513 (2025.01); H10D 64/602 (2025.01); H10D 84/08 (2025.01); H10D 84/82 (2025.01)] 25 Claims
OG exemplary drawing
 
1. A method for manufacturing an optical device, the method
providing a carrier wafer;
providing a first substrate having a first surface region;
forming a first gallium and nitrogen containing epitaxial material overlying the first surface region, the first epitaxial material comprising a first release material overlying the first substrate and one or more n-type gallium and nitrogen containing layers, one or more light emitting gallium and nitrogen containing layers comprising an active region configured to emit electromagnetic radiation at a first wavelength, and one or more p-type gallium and nitrogen containing layers overlying the first release material;
patterning the first epitaxial material and forming mesas to form a plurality of first dice arranged in an array;
forming a first interface region overlying the first epitaxial material;
bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures;
releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer;
forming grating features in the one or more n-type gallium and nitrogen containing layers of each of the mesa regions; and
forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation; wherein the grating features in the one or more n-type gallium and nitrogen containing layers are configured to provide feedback to the electromagnetic radiation.