| CPC H10D 64/254 (2025.01) [H10D 62/127 (2025.01); H10D 64/257 (2025.01); H10D 64/519 (2025.01)] | 9 Claims |
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1. A semiconductor device comprising:
a substrate having a front surface including a first long side and a second long side extending in a first direction and opposed to each other, and a first short side and a second short side extending in a second direction intersecting the first direction and opposed to each other;
a source finger provided on the front surface;
a drain finger provided on the front surface;
a gate finger provided on the front surface and sandwiched between the source finger and the drain finger; and
a drain bus bar provided on the front surface and connected to a first drain end of each of a plurality of drain fingers, and the first drain end being an end of each of the plurality of drain fingers closer to the first short side than the second short side; and
a gate bus bar provided on the front surface and connected to a first gate end of each of a plurality of gate fingers, and the first gate end being an end of each of the plurality of gate fingers closer to the second short side than the first short side;
wherein:
a via hole penetrating the substrate is provided in the substrate, a region where the via hole is connected to the source finger in the front surface is contained within the source finger, and the via hole has a maximum width in the first direction larger than a maximum width in the second direction,
the source finger, the drain finger, and the gate finger extend in the first direction and are arranged in the second direction,
the substrate includes an active region in which a semiconductor layer in the substrate is activated, and an inactive region in which the semiconductor layer is inactivated, and
the source finger, the drain finger and the gate finger are provided on the active region, and the drain bus bar and the gate bus bar are provided on the inactive region.
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