US 12,464,799 B2
Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication therefor
Bernhard Grote, Phoenix, AZ (US); Jie Hu, Chandler, AZ (US); Philippe Renaud, Chandler, AZ (US); Congyong Zhu, Gilbert, AZ (US); and Bruce McRae Green, Gilbert, AZ (US)
Assigned to NXP USA, INC., Austin, TX (US)
Filed by NXP USA, Inc., Austin, TX (US)
Filed on Dec. 28, 2022, as Appl. No. 18/147,197.
Prior Publication US 2024/0222443 A1, Jul. 4, 2024
Int. Cl. H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/80 (2025.01); H10D 64/01 (2025.01); H10D 64/60 (2025.01)
CPC H10D 64/111 (2025.01) [H10D 30/015 (2025.01); H10D 30/801 (2025.01); H10D 64/01 (2025.01); H10D 64/60 (2025.01)] 26 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate with an upper surface and a channel;
source and drain electrodes over the upper surface of the semiconductor substrate, wherein the source and drain electrodes are electrically coupled to the channel, and the channel extends between the source and drain electrodes;
a passivation layer over the upper surface of the semiconductor substrate and between the source and drain electrodes, wherein the passivation layer includes a lower passivation sub-layer over the upper surface of the semiconductor substrate, and an upper passivation sub-layer over the lower passivation sub-layer;
a first dielectric layer over the passivation layer;
a gate electrode over the upper surface of the semiconductor substrate between the source and drain electrodes, wherein the gate electrode includes a lower portion that extends through the first dielectric layer and the passivation layer; and
a conductive field plate adjacent to the gate electrode, wherein the conductive field plate includes a first portion with a recessed region that extends through the upper passivation sub-layer but does not extend through the lower passivation sub-layer, and an overhanging portion that extends over an upper surface of the first dielectric layer.