US 12,464,778 B2
Metal-oxide thin-film transistor, array base plate and fabricating method thereof
Dongfang Wang, Beijing (CN); Lizhong Wang, Beijing (CN); and Ce Ning, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN)
Appl. No. 17/919,387
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Nov. 29, 2021, PCT No. PCT/CN2021/134039
§ 371(c)(1), (2) Date Oct. 17, 2022,
PCT Pub. No. WO2023/092562, PCT Pub. Date Jun. 1, 2023.
Prior Publication US 2024/0297256 A1, Sep. 5, 2024
Int. Cl. H10D 30/67 (2025.01); H10D 30/01 (2025.01)
CPC H10D 30/6755 (2025.01) [H10D 30/0321 (2025.01); H10D 30/6723 (2025.01)] 17 Claims
OG exemplary drawing
 
1. An array base plate, wherein the array base plate comprises:
a substrate; and
a driving transistor and a switching transistor that are located on the substrate;
the driving transistor comprises a semiconductor layer;
the switching transistor comprises an active layer and a protecting layer, and the active layer comprises two opposite main surfaces and a side surface that is located between outer contours of the two main surfaces;
the protecting layer is located on a main surface of the active layer that is away from the substrate and covers the main surface and the side surface;
the protecting layer and the semiconductor layer are arranged in a same layer, and a material of the protecting layer and a material of the semiconductor layer are a same metal-oxide-semiconductor material; and
a carrier mobility of the protecting layer is less than a carrier mobility of the active layer;
wherein the switching transistor comprises a grid and a grid insulating layer; and
the grid insulating layer is located on one side of the protecting layer that is away from the active layer, the grid is located on one side of the grid insulating layer that is away from the substrate, and an orthographic projection of the grid on the substrate is located within an orthographic projection of the active layer on the substrate.