US 12,464,766 B2
Termination structure of super-junction power device comprising plurality of runway-shaped rings as the resistive field plate
Ming Qiao, Chengdu (CN); Ruidi Wang, Chengdu (CN); Yibing Wang, Chengdu (CN); and Bo Zhang, Chengdu (CN)
Assigned to University of Electronic Science and Technology of China, Chengdu (CN); and Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan (CN)
Filed by University of Electronic Science and Technology of China, Chengdu (CN); and Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan (CN)
Filed on Jul. 29, 2022, as Appl. No. 17/876,572.
Claims priority of application No. 202210460657.0 (CN), filed on Apr. 28, 2022.
Prior Publication US 2023/0352576 A1, Nov. 2, 2023
Int. Cl. H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01)
CPC H10D 30/665 (2025.01) [H10D 62/111 (2025.01); H10D 64/115 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A termination structure of a super-junction power device, wherein a polysilicon resistive field plate is arranged above a silicon layer; the polysilicon resistive field plate comprises a plurality of runway-shaped rings surrounding a gate metal layer; each of the plurality of runway-shaped rings is formed by connecting long straights in a middle of an upper side and a lower side, short straights in a middle of a left side and a right side, and curves between the long straights and the short straights; the plurality of runway-shaped rings have a first end directly connected to the gate metal layer and a second end directly connected to an edge metal layer; the first end and the second end are located on the long straights or the curves; and the plurality of runway-shaped rings are directly connected to each other.