US 12,464,757 B2
Electronic assembly provided with a plurality of high electron mobility transistors
Matthieu Nongaillard, Grenoble (FR); and Thomas Oheix, Grenoble (FR)
Assigned to STMicroelectronics France, Montrouge (FR)
Filed by STMicroelectronics France, Montrouge (FR); and STMicroelectronics International N.V., Geneva (CH)
Filed on Mar. 30, 2022, as Appl. No. 17/708,869.
Claims priority of application No. 2103564 (FR), filed on Apr. 7, 2021.
Prior Publication US 2022/0328681 A1, Oct. 13, 2022
Int. Cl. H10D 30/47 (2025.01); H01L 25/07 (2006.01); H10D 30/01 (2025.01); H10D 64/27 (2025.01)
CPC H10D 30/475 (2025.01) [H01L 25/074 (2013.01); H10D 30/015 (2025.01); H10D 64/519 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An electronic assembly, the assembly comprising:
at least two elementary modules stacked along a stacking direction;
at least two first contact layers corresponding to the at least two elementary modules, respectively,
wherein each elementary module of the at least two elementary modules includes:
along the stacking direction and from a second side to a first side of the elementary module, a second high electron mobility (HEMT) transistor and a first HEMT transistor, the first HEMT transistor and the second HEMT transistor having in common a source electrode, a drain electrode, and a gate electrode; and
an insulator layer between the first HEMT transistor and the second HEMT transistor, the drain electrode being surrounded by the insulator layer and separated from the at least two first contact layers along the stacking direction; and
wherein each first contact layer of the at least two first contact layers is in contact with a gate electrode of a respective elementary module on a first side of the respective elementary module, and includes an electric contact point emerging beyond an edge surface of the respective elementary module.