US 12,464,743 B2
Schottky diode
Feras Alkhalil, Cambridge (GB); Richard Price, Cambridge (GB); and Brian Cobb, Cambridge (GB)
Assigned to PRAGMATIC SEMICONDUCTOR LIMITED, Cambridge (GB)
Filed by PRAGMATIC SEMICONDUCTOR LIMITED, Cambridge (GB)
Filed on Apr. 5, 2023, as Appl. No. 18/131,014.
Application 18/131,014 is a continuation of application No. 16/771,400, granted, now 11,637,210, previously published as PCT/GB2018/053588, filed on Dec. 11, 2018.
Claims priority of application No. 1720630 (GB), filed on Dec. 11, 2017.
Prior Publication US 2023/0253509 A1, Aug. 10, 2023
Int. Cl. H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 30/67 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01); H10D 84/80 (2025.01); H10D 99/00 (2025.01); H10K 10/23 (2023.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 62/85 (2025.01); H10D 62/86 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 8/051 (2025.01); H10D 30/6755 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01); H10D 84/811 (2025.01); H10D 99/00 (2025.01); H10K 10/23 (2023.02); H10D 62/402 (2025.01); H10D 62/83 (2025.01); H10D 62/8503 (2025.01); H10D 62/86 (2025.01); H10D 62/871 (2025.01)] 30 Claims
OG exemplary drawing
 
1. A Schottky diode comprising:
a substrate or other supporting body or structure;
a first electrode formed directly or indirectly on a first region of a surface of the substrate or other supporting body or structure;
a second electrode; and
a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,
wherein
the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane,
the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction,
at least a portion of the second projection lies outside the first projection,
one of the first interface and the second interface provides a Schottky contact,
said body comprises a first side and a second side, said second side being spaced from the first side by a thickness of said body in said first direction, and
said first planar region being on said first side of the body and said second planar region being on said second side of the body,
the Schottky diode further comprising a dielectric body arranged to cover at least a second region of said surface of the substrate or other supporting body or structure adjacent the first region,
wherein said body of semiconductive material comprises a first portion, arranged over the first electrode and connected to the first electrode at said first interface, and a second portion arranged over a portion of the body of dielectric material covering said second region,
and wherein said second electrode is formed at least partly on said second portion of the body of semiconductive material,
wherein a portion, but not all, of said first projection lies inside said second projection,
and wherein a projection, in the first direction, of the second planar region onto the first plane lies completely outside a projection, in the first direction, of the first planar region onto the first plane.