US 12,464,742 B2
Vertical diode configurations for radiation-environment applications
Sudarsan Uppili, Portland, OR (US); Scott Joseph Alberhasky, Hillsboro, OR (US); and David Lee Snyder, Beaverton, OR (US)
Assigned to SCDevice LLC, Portland, OR (US)
Filed by SCDevice LLC, Portland, OR (US)
Filed on Dec. 23, 2022, as Appl. No. 18/088,501.
Claims priority of provisional application 63/293,372, filed on Dec. 23, 2021.
Prior Publication US 2023/0207706 A1, Jun. 29, 2023
Int. Cl. H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 62/126 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A vertical diode comprising:
a first region with a first conductivity type;
a set of fingers with a second conductivity type and located in a top portion of the first region;
at least one tap region with the first conductivity type formed in the set of fingers;
a metal layer located over and in contact with the first region, located over and in contact with the set of fingers, and forming a Schottky barrier with the first region of the first conductivity type; and
a depletion region that extends between the fingers in the set of fingers through the first region and under the Schottky barrier when the vertical diode is off.