| CPC H10B 12/033 (2023.02) [H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10D 1/716 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising:
an active pattern;
a capacitor contact structure electrically connected to the active pattern; and
a capacitor structure electrically connected to the capacitor contact structure,
wherein the capacitor structure includes:
a first lower electrode and a second lower electrode, which are adjacent to each other;
a supporter supporting the first and second lower electrodes;
a capacitor insulating layer covering the first and second lower electrodes; and
an upper electrode on the capacitor insulating layer,
wherein the supporter includes a first supporter curved sidewall connected to the first lower electrode and the second lower electrode,
wherein the upper electrode includes an intervening electrode portion enclosed by the supporter, and
wherein the first supporter curved sidewall is convex toward the intervening electrode portion.
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