| CPC H05K 1/0306 (2013.01) [H05K 1/118 (2013.01); H05K 2201/10151 (2013.01)] | 11 Claims |

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11. A method for sensing a temperature of a power semiconductor switch, the method comprising:
introducing a heat loss generated by the power semiconductor switch into a ceramic circuit carrier integrally connected to the power semiconductor switch; and
conducting the introduced heat loss away from the power semiconductor switch transversely, in an electrically conductive layer connected to a ceramic layer of the circuit carrier in an area of the power semiconductor switch, and the heat loss is conducted in the electrically conductive layer to a flexible circuit board integrally connected to the electrically conductive layer, and is conducted through the flexible circuit board along a thickness extension of the flexible circuit board up to a temperature sensor soldered to the flexible circuit board.
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