US 12,463,607 B2
Doherty amplifier
Junlei Zhao, Nijmegen (NL); Yi Zhu, Nijmegen (NL); and Radjindrepersad Gajadharsing, Nijmegen (NL)
Assigned to Ampleon Netherlands B.V., Nijmegen (NL)
Filed by Ampleon Netherlands B.V., Nijmegen (NL)
Filed on Mar. 14, 2023, as Appl. No. 18/183,766.
Claims priority of application No. 2031290 (NL), filed on Mar. 15, 2022.
Prior Publication US 2023/0299728 A1, Sep. 21, 2023
Int. Cl. H03F 1/02 (2006.01); H03F 3/21 (2006.01)
CPC H03F 3/211 (2013.01) [H03F 1/0288 (2013.01); H03F 2200/451 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A radiofrequency (RF) power amplifier, comprising:
an input lead;
a first output lead;
a first semiconductor die arranged in between the input lead and the first output lead and having:
a first edge arranged adjacent to the input lead; and
an opposing second edge arranged adjacent to the first output lead; and
a field-effect transistor integrated on the first semiconductor die and comprising:
a gate bondpad assembly;
a plurality of gate bondwires that directly or indirectly electrically connect the input lead to the gate bondpad assembly;
a drain bondpad assembly;
a plurality of drain bondwires that directly or indirectly electrically connect the first output lead to the drain bondpad assembly;
a plurality of gate fingers extending in a first direction from the gate bondpad assembly towards the drain bondpad assembly; and
a plurality of drain fingers extending in a second direction opposite to the first direction from the drain bondpad assembly towards the gate bondpad assembly,
wherein the gate bondpad assembly is arranged in between the first edge and the drain bondpad assembly,
wherein the drain bondpad assembly is arranged in between the second edge and the gate bondpad assembly,
wherein the field-effect transistor further comprises at least one auxiliary gate bondpad assembly, each auxiliary gate bondpad assembly being arranged spaced apart from the plurality of gate fingers in a respective direction perpendicular to the first direction,
wherein each auxiliary gate bondpad assembly is arranged closer to the drain bondpad assembly than to the gate bondpad assembly when seen in the first direction,
wherein each auxiliary gate bondpad assembly is electrically connected to the gate bondpad assembly,
wherein the power amplifier further comprises, for each of the at least one auxiliary gate bondpad assembly, one or more bondwires that each have:
a first end that is physically and electrically connected to that auxiliary gate bondpad assembly; and
a second end that is configured to be RF grounded during operation.