US 12,463,601 B2
Dual-band low-noise amplifier circuit, low-noise amplifier, and device
Yaohua Zheng, Guangzhou (CN); Minjun He, Guangzhou (CN); Ping Li, Guangzhou (CN); and Qiang Su, Guangzhou (CN)
Assigned to SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD., Guangzhou (CN)
Filed by SMARTER MICROELECTRONICS (GUANG ZHOU) CO., LTD., Guangzhou (CN)
Filed on Dec. 10, 2022, as Appl. No. 18/064,263.
Application 18/064,263 is a continuation of application No. PCT/CN2021/102683, filed on Jun. 28, 2021.
Claims priority of application No. 202010790745.8 (CN), filed on Aug. 7, 2020.
Prior Publication US 2023/0108382 A1, Apr. 6, 2023
Int. Cl. H03F 3/19 (2006.01); H03F 1/56 (2006.01)
CPC H03F 3/19 (2013.01) [H03F 1/565 (2013.01); H03F 2200/222 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A dual-band low-noise amplifier circuit, comprising:
an amplification sub-circuit configured to perform gain amplification on a to-be-amplified radio frequency (RF) signal to obtain an amplified RF signal, and output the amplified RF signal; and
a switch frequency selection circuit connected to the amplification sub-circuit, and configured to control a state of a switch in the switch frequency selection circuit based on a target band corresponding to the to-be-amplified RF signal, such that the dual-band low-noise amplifier circuit meets optimal performance in the target band;
wherein the switch frequency selection circuit comprises:
an input matching sub-circuit connected to an input end of the amplification sub-circuit, and configured to select an input matching mode corresponding to the target band, and transmit the to-be-amplified RF signal into the amplification sub-circuit based on the input matching mode;
an output matching sub-circuit connected to an output end of the amplification sub-circuit, and configured to select an output matching mode corresponding to the target band, and transmit the amplified RF signal based on the output matching mode; and
a degradation inductor sub-circuit connected to the input end of the amplification sub-circuit, and configured to select a degradation inductor mode corresponding to the target band, and perform the gain amplification on the to-be-amplified RF signal by cooperating with the amplification sub-circuit based on the degradation inductor mode;
wherein in response to the target band being a high frequency:
the input matching sub-circuit selects a first input mode, and transmits the to-be-amplified RF signal into the amplification sub-circuit based on the first input mode;
the output matching sub-circuit selects a first output mode, and transmits the amplified RF signal based on the first output mode; and
the degradation inductor sub-circuit selects a first degradation inductor mode, and performs the gain amplification on the to-be-amplified RF signal by cooperating with the amplification sub-circuit based on the first degradation inductor mode;
wherein in response to the target band being a low frequency:
the input matching sub-circuit selects a second input mode, and transmits the to-be-amplified RF signal into the amplification sub-circuit based on the second input mode;
the output matching sub-circuit selects a second output mode, and transmits the amplified RF signal based on the second output mode; and
the degradation inductor sub-circuit selects a second degradation inductor mode, and performs the gain amplification on the to-be-amplified RF signal by cooperating with the amplification sub-circuit based on the second degradation inductor mode;
wherein the output matching sub-circuit comprises:
a choke capacitor component comprising at least a choke inductor and a third capacitor bank connected in parallel, wherein the third capacitor bank comprises at least a third capacitor and a third connection switch configured to control electrical parameters by which the third capacitor bank affects the choke capacitor component; and
an output capacitor component comprising a fourth capacitor and a fifth capacitor bank connected in series, wherein the fifth capacitor bank comprises at least a fifth capacitor and a fourth connection switch configured to control electrical parameters by which the fifth capacitor bank affects the output capacitor component;
wherein in response to the third connection switch being in an opening state and the fourth connection switch being in an opening state, it is confirmed that the output matching sub-circuit is in the first output mode; or
in response to the third connection switch being in a closed state and the fourth connection switch being in a closed state, it is confirmed that the output matching sub-circuit is in the second output mode.