| CPC H02P 27/06 (2013.01) [H01L 23/049 (2013.01); H01L 23/3107 (2013.01); H01L 23/4952 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01)] | 18 Claims |
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1. A semiconductor apparatus comprising:
a power semiconductor element;
a control chip:
including a plurality of terminals including a first terminal and a second terminal; and
being configured to control the power semiconductor element using a power supply voltage supplied to the second terminal;
a first conductor for supplying a predetermined control voltage to the first terminal;
a first line for supplying the power supply voltage to the second terminal; and
a semiconductor chip including a diode that is used for a bootstrap operation for generating the power supply voltage,
wherein
the semiconductor chip includes:
a semiconductor substrate:
including a first face and a second face that are opposed to each other, and
having a PN junction of the diode formed by a p-type semiconductor region on the first face and an n-type semiconductor region on the second face;
a resistive element;
an anode of the diode formed on the first face and joined directly to a surface of the first conductor, the anode of the diode being electrically connected to the first terminal; and
a cathode of the diode formed on the second face and electrically connected to the second terminal via the resistive element and the first line, the cathode of the diode being electrically connected one end of the resistive element, wherein the other end of the resistive element being electrically connected to the second terminal.
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