US 12,463,527 B2
Semiconductor element drive device
Yuto Shibuta, Fukuoka (JP); and Shohei Higashi, Fukuoka (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on May 2, 2024, as Appl. No. 18/653,900.
Claims priority of application No. 2023-149881 (JP), filed on Sep. 15, 2023.
Prior Publication US 2025/0096669 A1, Mar. 20, 2025
Int. Cl. H02M 1/08 (2006.01); H03K 17/082 (2006.01); H03K 17/18 (2006.01); H03K 17/08 (2006.01)
CPC H02M 1/08 (2013.01) [H03K 17/0826 (2013.01); H03K 17/18 (2013.01); H03K 2017/0806 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor element drive device driving a semiconductor element, comprising:
a plurality of error state detection circuits each detecting an error state of the semiconductor element or the semiconductor element drive device and generating at least one error signal corresponding to the error state which has been detected;
an error state identification signal generation circuit generating an error state identification signal having a different waveform for each type of the error state and having a smaller pulse width than each of the error signals based on the plurality of error signals generated in the plurality of error state detection circuits, respectively;
an error state identification signal output terminal outputting the error state identification signal;
a protection operation signal generation circuit generating a protection operation signal for protecting the semiconductor element based on the error state identification signal;
a protection operation signal output terminal outputting the protection operation signal; and
a protection circuit protecting the semiconductor element based on the protection operation signal.