US 12,463,402 B2
Nanowire light emitting devices
Yong-Ho Ra, Jinju (KR); Roksana Tonny Rashid, Montreal (CA); Xianhe Liu, Ann Arbor, MI (US); and Zetian Mi, Ann Arobr, MI (US)
Assigned to THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US)
Filed by The Regents of the University of Michigan, Ann Arbor, MI (US)
Filed on Jan. 18, 2024, as Appl. No. 18/416,740.
Application 18/416,740 is a continuation of application No. 17/071,832, filed on Oct. 15, 2020, granted, now 11,909,176.
Claims priority of provisional application 62/915,432, filed on Oct. 15, 2019.
Prior Publication US 2025/0047075 A1, Feb. 6, 2025
Int. Cl. H01S 5/34 (2006.01); H01S 5/11 (2021.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/341 (2013.01) [H01S 5/11 (2021.01); H01S 5/183 (2013.01); H01S 5/30 (2013.01); H01S 5/320275 (2019.08); H01S 5/32308 (2013.01); H01S 5/34333 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting device including a plurality of nanowires, the nanowires comprising:
a n-doped gallium nitride (n-GaN) cladding layer;
a heterostructure region comprising a semipolar plane disposed on the n-GaN cladding layer; and
a p-doped gallium nitride (p-GaN) cladding layer disposed on the heterostructure region;
wherein the plurality of nanowires have a photonic crystalline structure with a reciprocal latter comprising six equivalent and coupled Brillouin zone gamma points; and
wherein the plurality of nanowires have predetermined size and spacing.