US 12,463,400 B2
Diode laser with current block
Pietro Della Casa, Berlin (DE); Mohamed Elattar, Berlin (DE); Paul Crump, Berlin (DE); and Hans Wenzel, Berlin (DE)
Assigned to FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIK, Berlin (DE)
Appl. No. 18/040,490
Filed by FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ-INSTITUT FÜR HÖCHSTFREQUENZTECHNIK, Berlin (DE)
PCT Filed Aug. 5, 2021, PCT No. PCT/EP2021/071921
§ 371(c)(1), (2) Date Feb. 3, 2023,
PCT Pub. No. WO2022/029254, PCT Pub. Date Feb. 10, 2022.
Claims priority of application No. 10 2020 120 703.4 (DE), filed on Aug. 5, 2020.
Prior Publication US 2023/0299563 A1, Sep. 21, 2023
Int. Cl. H01S 5/00 (2006.01); H01S 5/16 (2006.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01)
CPC H01S 5/168 (2013.01) [H01S 5/2206 (2013.01); H01S 5/2226 (2013.01); H01S 5/2232 (2013.01)] 9 Claims
OG exemplary drawing
 
1. Diode laser, comprising:
an n-substrate made of an n-doped material;
an n-cladding layer made of an n-doped material disposed on the n-substrate;
an n-waveguide layer made of an n-doped material disposed on the n-cladding layer;
an active layer disposed on the n-waveguide layer;
a p-waveguide layer made of a p-doped material disposed on the active layer;
a p-cladding layer made of a p-doped material disposed on the p-waveguide layer;
a p-contact layer made of a p-doped material disposed on the p-cladding layer; and
a p-contact disposed on the p-contact layer;
wherein the diode laser comprises a layered current block made of a material doped in opposition to its surroundings for a spatially selective current injection of the active layer between the n-substrate and the p-contact;
wherein the current block is separated from adjacent layers via an intrinsic outer layer, wherein the thickness of the intrinsic outer layer is between 5 nm and 50 nm, wherein the current block comprises a first layer having a first thickness and a second layer disposed on the first layer having a second thickness greater than the first thickness, and wherein the sum of the thicknesses of the first layer and the second layer is between 5 nm and 100 nm.