US 12,463,319 B2
Integrated antennas on side wall of 3D stacked die
Sam Karikalan, Ladera Ranch, CA (US); Sam Zhao, Irvine, CA (US); Mayank Mayukh, Fort Collins, CO (US); Dharmendra Saraswat, Foothill Ranch, CA (US); Liming Tsau, Irvine, CA (US); Arun Ramakrishnan, Lake Forest, CA (US); and Reza Sharifi, Irvine, CA (US)
Assigned to Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed by Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed on Jul. 28, 2022, as Appl. No. 17/876,518.
Prior Publication US 2024/0039141 A1, Feb. 1, 2024
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01)
CPC H01Q 1/2283 (2013.01) [H01L 23/481 (2013.01); H01L 23/49822 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01Q 9/0407 (2013.01); H01L 24/29 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/8385 (2013.01); H01L 2924/0665 (2013.01)] 8 Claims
OG exemplary drawing
 
1. An apparatus comprising:
two or more die layers that are bonded together, each of the two or more die layers comprising a top surface, bottom surface, and one or more side walls,
wherein a first side wall of the one or more side walls includes a first antenna array, the first antenna array comprising a first plurality of antenna array elements formed in at least one of the two or more die layers, wherein the first plurality of antenna array elements is at least partially exposed at the first side wall, the first plurality of antenna array elements comprising internal metallization layers of through-silicon vias (TSVs), two or more of the internal metallization layers being coupled at the first side wall.