US 12,463,172 B2
AG alloy bonding wire for semiconductor devices and semiconductor device
Daizo Oda, Saitama (JP); Takumi Ookabe, Saitama (JP); Motoki Eto, Saitama (JP); Noritoshi Araki, Saitama (JP); Ryo Oishi, Saitama (JP); Teruo Haibara, Saitama (JP); Tomohiro Uno, Tokyo (JP); and Tetsuya Oyamada, Tokyo (JP)
Assigned to NIPPON MICROMETAL CORPORATION, Saitama (JP); and NIPPON STEEL Chemical & Material Co., Ltd., Tokyo (JP)
Appl. No. 17/916,935
Filed by NIPPON MICROMETAL CORPORATION, Saitama (JP); and NIPPON STEEL Chemical & Material Co., Ltd., Tokyo (JP)
PCT Filed Mar. 29, 2021, PCT No. PCT/JP2021/013364
§ 371(c)(1), (2) Date Oct. 4, 2022,
PCT Pub. No. WO2021/205931, PCT Pub. Date Oct. 14, 2021.
Claims priority of application No. 2020-068997 (JP), filed on Apr. 7, 2020.
Prior Publication US 2023/0154884 A1, May 18, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/49 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/45 (2013.01) [H01L 24/43 (2013.01); H01L 24/48 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/48465 (2013.01)] 8 Claims
 
1. An Ag alloy bonding wire for semiconductor devices,
comprising at least one first element selected from the group consisting of Pd and Pt and at least one second element selected from the group consisting of P, Cr, Zr and Mo so as to satisfy
0.05≤x1≤3.0, and
15≤x2≤700
where x1 is a total concentration of the first element by atomic percentage and x2 is a total concentration of the second element by atomic ppm,
with the balance comprising Ag,
wherein the Ag alloy bonding wire comprises at least Cr, Zr or Mo as the second element.