| CPC H01L 24/20 (2013.01) [H01L 24/13 (2013.01); H01L 24/73 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 2224/13006 (2013.01); H01L 2224/13008 (2013.01); H01L 2224/13016 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/2101 (2013.01); H01L 2224/2105 (2013.01); H01L 2224/211 (2013.01); H01L 2224/214 (2013.01); H01L 2224/215 (2013.01); H01L 2224/73101 (2013.01)] | 17 Claims |

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1. A semiconductor package comprising:
a redistribution structure having a front surface and a rear surface opposite the front surface, the redistribution structure comprising an insulating layer and a redistribution conductor provided in the insulating layer;
a semiconductor chip provided on the rear surface and comprising a connection pad electrically connected to the redistribution conductor;
an encapsulant provided on at least a portion of the semiconductor chip;
under-bump metal (UBM) vias extending from the redistribution conductor to the front surface of the redistribution structure within the insulating layer;
UBM pads provided on the front surface of the redistribution structure to correspond to the UBM vias, respectively, and each UBM pad of the UBM pads having an exposed surface convexly protruding away from the front surface of the redistribution structure; and
a metal bump provided on the UBM pads and contacting the exposed surface of each UBM pad of the UBM pads,
wherein a boundary surface of the metal bump and each of the UBM pads is defined by the exposed surface of each of the UBM pads, and the metal bump extends between the exposed surface of at least two UBM pads, of the UBM pads, that are provided within a perimeter of the metal bump.
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