| CPC H01L 23/5387 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/4985 (2013.01); H01L 23/49894 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 25/0657 (2013.01); H01L 24/48 (2013.01); H01L 25/0652 (2013.01); H01L 2224/48227 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2924/1434 (2013.01)] | 35 Claims |

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1. A semiconductor device assembly, comprising:
a first semiconductor die;
a second semiconductor die in a stacked arrangement with the first semiconductor die; and
a flexible interposer disposed between the first semiconductor die and the second semiconductor die, comprising:
a first flexible layer;
a second flexible layer; and
a conductive trace disposed between the first flexible layer and the second flexible layer,
wherein a spacer portion of the flexible interposer spaces the first semiconductor die from the second semiconductor die, and
wherein a connecting portion of the flexible interposer extends from the spacer portion beyond edges of the first semiconductor die and the second semiconductor die.
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