US 12,463,137 B2
Integrated circuit device with interconnects made of layered topological materials
Bogdan Cezar Zota, Rueschlikon (CH); Bernd W. Gotsmann, Horgen (CH); Heinz Schmid, Horgen (CH); Alan Molinari, Kilchberg (CH); and Lorenzo Rocchino, Zurich (CH)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 2, 2022, as Appl. No. 18/060,979.
Prior Publication US 2024/0186249 A1, Jun. 6, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H01L 23/53266 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01)] 18 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
one or more interconnects, wherein
each interconnect of the one or more interconnects is structured as a stack of layers including distinct topological layers, each of the distinct topological layers being a layer of topological material, and
any two successive layers of the distinct topological layers are separated by one or more interfaces, each forming a boundary between two consecutive layers of the stack, where the two consecutive layers are engineered to preserve topologically protected surface states of each of the any two successive layers of the distinct topological layers, and the two consecutive layers have characteristics selected from a group consisting of: different chemical compositions, and different crystal structure properties.